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2N7002KT

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K;Package:SOT-523;N-Channel Enhancement Mode Field Effect Transistor

Features ? Low on resistance RDS(ON) ? Low gate threshold voltage ? Low input capacitance ? ESD protected up to 2KV

文件:716.72 Kbytes 頁(yè)數(shù):3 Pages

GWSEMI

唯圣電子

2N7002K-T1

N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

文件:219.28 Kbytes 頁(yè)數(shù):9 Pages

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

2N7002K-T1-E3

N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

文件:219.28 Kbytes 頁(yè)數(shù):9 Pages

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

2N7002K-T1-E3

N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

文件:219.28 Kbytes 頁(yè)數(shù):9 Pages

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

2N7002KT1G

Small Signal MOSFET 60 V, 380 mA, Single, N??hannel, SOT??3

Features ? ESD Protected ? Low RDS(on) ? Surface Mount Package ? 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications

文件:103.16 Kbytes 頁(yè)數(shù):6 Pages

ONSEMI

安森美半導(dǎo)體

2N7002KT1G

Small Signal MOSFET 60 V, 380 mA, Single, N??hannel, SOT??3

Features ? ESD Protected ? Low RDS(on) ? Surface Mount Package ? 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications

文件:106.85 Kbytes 頁(yè)數(shù):5 Pages

ONSEMI

安森美半導(dǎo)體

2N7002K-T1-GE3

N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

文件:219.28 Kbytes 頁(yè)數(shù):9 Pages

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

2N7002KT3G

Small Signal MOSFET 60 V, 380 mA, Single, N??hannel, SOT??3

Features ? ESD Protected ? Low RDS(on) ? Surface Mount Package ? 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications

文件:103.16 Kbytes 頁(yè)數(shù):6 Pages

ONSEMI

安森美半導(dǎo)體

2N7002KTB

絲?。?a target="_blank" title="Marking" href="/27/marking.html">27;Package:SOT-523;60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays

文件:117.39 Kbytes 頁(yè)數(shù):5 Pages

PANJIT

強(qiáng)茂

2N7002KTB

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

文件:158.48 Kbytes 頁(yè)數(shù):7 Pages

PANJIT

強(qiáng)茂

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    2N7002E

  • 制造商:

    ANBON SEMICONDUCTOR (INT'L) LIMITED

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET,MOSFET - 單個(gè)

  • 包裝:

    管件

  • 描述:

    N-CHANNEL SMD MOSFET ESD PROTECT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD
17+
NA
6200
100%原裝正品現(xiàn)貨
詢價(jià)
12+
SOT-232
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
詢價(jià)
PHI
24+/25+
2724
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
詢價(jià)
恩XP
23+
SOT23
12300
詢價(jià)
PANJIT強(qiáng)
13+
9425
原裝分銷
詢價(jià)
PHI
24+
TO-251
2147
原裝現(xiàn)貨假一罰十
詢價(jià)
DIODES
2020+
SOT-323
12783
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
CHENMKO
24+
SOT-363SOT-323-6
9200
新進(jìn)庫(kù)存/原裝
詢價(jià)
恩XP
16+
NA
8800
誠(chéng)信經(jīng)營(yíng)
詢價(jià)
VISHAY
23+
SOT-23
60000
原裝正品,假一罰十
詢價(jià)
更多2N7002_供應(yīng)商 更新時(shí)間2025-8-7 8:31:00