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絲?。?a target="_blank" title="Marking" href="/k27/marking.html">K27；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3? ? RDS(ON), VGS@4.5V,IDS@200mA=4? ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Re

文件：183.25 Kbytes 頁數(shù)：5 Pages

PANJIT

強茂

絲印：72K；Package：SOT-363；Plastic-Encapsulate MOSFET

Features ? High density cell design for low RDS(ON) ? Voltage controlled small signal switch ? Rugged and reliable ? High saturation current capability ? ESD protected ? Load Switch for Portable Devices. ? DC/DC Converter.

文件：1.42099 Mbytes 頁數(shù)：3 Pages

GWSEMI

唯圣電子

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

文件：308.91 Kbytes 頁數(shù)：7 Pages

PANJIT

強茂

N-Channel Enhancement Mode Field Effect Transistor

Features ? High density cell design for Low RDS(ON) ? Voltage controlled small signal switch ? Rugged and reliable ? High saturation current capability ? ESD protected up to 2KV ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? Halogen free available upon request

文件：429.13 Kbytes 頁數(shù)：3 Pages

MCC

美微科

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers

文件：326.6 Kbytes 頁數(shù)：7 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ? RDS(ON), VGS@10V, ID@500mA

文件：599.54 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂

絲印：K27；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ? RDS(ON), VGS@10V, ID@500mA

文件：599.54 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ? RDS(ON), VGS@10V, ID@500mA

文件：599.54 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂

絲印：72K；Package：SOT-363；Plastic-Encapsulate MOSFETS

FEATURE High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP ca

文件：337.35 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

MOSFET

Features - High density cell design for low RDS(ON). - Voltage controlled small signal switch. - High saturation current capability. - ESD protected.

文件：511.93 Kbytes 頁數(shù)：5 Pages

COMCHIP

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