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絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features V DS = 60V,ID = 0.34A RDS(ON)

文件：427.5 Kbytes 頁(yè)數(shù)：5 Pages

RECTRON

Advanced MOSFETprocess technology

Features and Benefits: ? Advanced MOSFETprocess technology ? Special designed for PWM, load switching and general purpose applications ? Ultra low on-resistance with low gate charge ? Fast switching and reverse body recovery ? 150℃ operating temperature Description It utilizes the latest

文件：382.2 Kbytes 頁(yè)數(shù)：5 Pages

SILIKRON

新硅能微電子

絲印：72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Features ?Low on resistance RDS(ON)?Low gate threshold voltage?Low input capacitance?ESD protected up to 2KV?-CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable

文件：419.51 Kbytes 頁(yè)數(shù)：3 Pages

GWSEMI

唯圣電子

MOSFET

Features - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage.

文件：575.11 Kbytes 頁(yè)數(shù)：6 Pages

COMCHIP

典琦

N Channel MOSFET ESD Protected 2000V

INTERFACE AND SWITCHING APPLICATION. FEATURES ? ESD Protected 2000V. ? High density cell design for low RDS(ON). ? Voltage controlled small signal switch. ? Rugged and reliable. ? High saturation current capablity.

文件：372.74 Kbytes 頁(yè)數(shù)：4 Pages

KECKEC CORPORATION

KEC株式會(huì)社

60V ESD Protected N-Channel Enhancement Mode MOSFET

RDS(ON), VGS@10V, IDS@500mA=2? RDS(ON), VGS@4.5V, IDS@200mA=3? FEATURES ? Advanced Trench Process Technology ? Ultra Low On Resistance : 2? ? Fast Switching Speed : 20ns ? Low Input and Output Leakage Current ? 2KV ESD Protection ? Specially Designed for High Speed Circuit, Battery Operate

文件：256.12 Kbytes 頁(yè)數(shù)：4 Pages

HY

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-363；Dual N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 0.34A ● RDS(ON)( at VGS=10V)

文件：616.27 Kbytes 頁(yè)數(shù)：6 Pages

YANGJIE

揚(yáng)州揚(yáng)杰電子

N-Channel Enhancement Mode Field Effect Transistor

Features ? High density cell design for Low RDS(ON) ? Voltage controlled small signal switch ? Rugged and reliable ? High saturation current capability ? ESD protected up to 2KV ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? Halogen free available upon request

文件：367.36 Kbytes 頁(yè)數(shù)：3 Pages

MCC

美微科

Dual N-Channel Small Signal MOSFET

FEATURES ● Low on-resistance ● Fast switching Speed ● Low-voltage drive ● Easily designed drive circuits ● ESD protected:2000V MECHANICAL DATA ● Case: SOT-363 ● Case Material-UL flammability rating 94V-0 ● Terminals: Solderable per MIL-STD-202, Method 208 ● Weight: 0.006 grams(approx.)

文件：431.3 Kbytes 頁(yè)數(shù)：2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

Dual N-Channel MOSFET

Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V Mechanical Data: *Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 *Terminals: Solderable per MIL-STD-202, Method 208 *Weight: 0.006 gr

文件：152.56 Kbytes 頁(yè)數(shù)：4 Pages

WEITRON