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N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications ? Motor Control ? Power Management Functions ? Backlighting Features

文件：575.09 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications ? Motor Control ? Power Management Functions ? Backlighting Features

文件：575.09 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications ? Motor Control ? Power Management Functions ? Backlighting Features

文件：575.09 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導(dǎo)體

絲印：702M；Package：SOT-23；MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA

Features ? 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable (2V7002L) ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

文件：265.3 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/702/marking.html">702*；Package：SOT-23；Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23

Small Signal MOSFET 60 V, 115 mA, N?Channel SOT?23 Features ? Pb?Free Packages are Available

文件：58.68 Kbytes 頁數(shù)：4 Pages

ONSEMI

安森美半導(dǎo)體

MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA

Features ? 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable (2V7002L) ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

文件：265.3 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signa

文件：148.68 Kbytes 頁數(shù)：6 Pages

UTC

友順

60V, 115mA, N-CHANNEL MOSFET

DESCRIPTION The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) = 7.5? @VGS = 10 V * Low Reverse Transfer Capacitanc

文件：162.25 Kbytes 頁數(shù)：3 Pages

UTC

友順

60V, 115mA, N-CHANNEL MOSFET

DESCRIPTION The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * RDS(ON) = 7.5? @VGS = 10 V * Low Reverse Transfer Capacitanc

文件：162.25 Kbytes 頁數(shù)：3 Pages

UTC

友順

Small Signal MOSFET 115 mAmps, 60 Volts N??hannel SOT??3

? RoHS product for packing code suffix G Halogen free product for packing code suffix H ? Weight:0.008g

文件：299.63 Kbytes 頁數(shù)：4 Pages

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