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60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

文件：263.42 Kbytes 頁數(shù)：7 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

文件：263.42 Kbytes 頁數(shù)：7 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

文件：263.42 Kbytes 頁數(shù)：7 Pages

PANJIT

強茂

N-Channel Enhancement Mode Field Effect Transistor

Features ? High density cell design for Low RDS(ON) ? Voltage controlled small signal switch ? Rugged and reliable ? High saturation current capability ? Low Input/Output Leakage ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? Halogen free available upon reques

文件：650.04 Kbytes 頁數(shù)：3 Pages

MCC

美微科

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ? RDS(ON), VGS@10V, ID@500mA

文件：629.87 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂

絲?。?a target="_blank" title="Marking" href="/k72/marking.html">K72；Package：SOT-323；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ? RDS(ON), VGS@10V, ID@500mA

文件：629.87 Kbytes 頁數(shù)：6 Pages

PANJIT

強茂

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-323；N-Channel MOSFET

FEATURE High density cell design for Low RDS(on) Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP cap

文件：422.73 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance * ESD Protected * Fast Switching Cap

文件：203.34 Kbytes 頁數(shù)：4 Pages

UTC

友順

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOD-323；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：504.36 Kbytes 頁數(shù)：6 Pages

YANGJIE

揚州揚杰電子

380mA N-channel Small Signal MOSFET-60V

Features ? ESD Protected ? Low RDS(on) ? Surface Mount Package ? This is a Pb?Free Device ? We declare that the material of product are Halogen Free and compliance with RoHS requirements. ? S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requi

文件：1.07133 Mbytes 頁數(shù)：8 Pages

WILLASWILLAS ELECTRONIC CORP

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