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2N7002K-AU_TX_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays

文件：326.7 Kbytes 頁數(shù)：7 Pages

PANJIT

強(qiáng)茂

2N7002K-AU_TX_10001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays

文件：326.7 Kbytes 頁數(shù)：7 Pages

PANJIT

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2N7002K-AU_TY_00001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays

文件：326.7 Kbytes 頁數(shù)：7 Pages

PANJIT

強(qiáng)茂

2N7002K-AU_TY_10001

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays

文件：326.7 Kbytes 頁數(shù)：7 Pages

PANJIT

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2N7002K-AU_V01

60V N-Channel Enhancement Mode MOSFET–ESD Protected

Features ?RDS(ON),VGS@10V,ID@500mA

文件：974.92 Kbytes 頁數(shù)：6 Pages

PANJIT

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2N7002KB

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.34A RDS(ON)

文件：509.44 Kbytes 頁數(shù)：5 Pages

RECTRON

2N7002KB

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.34A RDS(ON)

文件：509.77 Kbytes 頁數(shù)：5 Pages

RECTRON

2N7002KB

60V N-Channel MOSFET

Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide va

文件：675.68 Kbytes 頁數(shù)：6 Pages

Good-Ark

2N7002KBS3

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-323；N-Channel Mosfet

FEATURES Rds(on) ≤ 3? @Vgs=10V Rds(on) ≤ 4? @Vgs=4.5V

文件：191.87 Kbytes 頁數(shù)：5 Pages

RECTRON

2N7002KBV

N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.34A RDS(ON)

文件：509.77 Kbytes 頁數(shù)：5 Pages

RECTRON

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    2N7002E

  • 制造商：

    ANBON SEMICONDUCTOR (INT'L) LIMITED

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個(gè)

  • 包裝：

    管件

  • 描述：

    N-CHANNEL SMD MOSFET ESD PROTECT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD
17+
NA
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
12+
SOT-232
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
PHI
24+/25+
2724
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
恩XP
23+
SOT23
12300
詢價(jià)
PANJIT強(qiáng)
13+
9425
原裝分銷
 詢價(jià)
PHI
24+
TO-251
2147
原裝現(xiàn)貨假一罰十
 詢價(jià)
DIODES
2020+
SOT-323
12783
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
CHENMKO
24+
SOT-363SOT-323-6
9200
新進(jìn)庫存/原裝
 詢價(jià)
恩XP
16+
NA
8800
誠信經(jīng)營
 詢價(jià)
VISHAY
23+
SOT-23
60000
原裝正品,假一罰十
 詢價(jià)
更多2N7002_供應(yīng)商 更新時(shí)間2025-8-7 8:31:00

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