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N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s

文件：624.73 Kbytes 頁(yè)數(shù)：7 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：1.04155 Mbytes 頁(yè)數(shù)：6 Pages

YANGJIE

揚(yáng)州揚(yáng)杰電子

絲?。?a target="_blank" title="Marking" href="/k7k/marking.html">K7K；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s

文件：624.73 Kbytes 頁(yè)數(shù)：7 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/k7k/marking.html">K7K；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The 2N7002KQ is suitable for automotive applications requiring s

文件：624.73 Kbytes 頁(yè)數(shù)：7 Pages

DIODES

美臺(tái)半導(dǎo)體

絲印：C7；Package：DFN1110D-3；60 V N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Side wettable flanks for optical

文件：281.49 Kbytes 頁(yè)數(shù)：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

絲印：SK；Package：SC70；Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-70

FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. ESD Protected

文件：119.25 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-363；Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Applications Intended for use in general purpose switching and phase control applications.

文件：461.13 Kbytes 頁(yè)數(shù)：7 Pages

RECTRON

N-Channel Enhancement MOSFET

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● ESD Protected 2KV HBM

文件：1.09262 Mbytes 頁(yè)數(shù)：4 Pages

YFWDIODE

佑風(fēng)微電子

Channel Enhancement MOSFET

FEATURES ? Low Gate Charge for Fast Switching. ? ESD Protected Gate. APPLICATIONS ? Power Management Load Switch ? ESD Protected:1500V ? Easily designed drive circuits

文件：169.65 Kbytes 頁(yè)數(shù)：3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

N-Channel ENHANCEMENT MODE POWER MOSFET

FEATURES: * Gate-Source ESD Protected: 1500 V * Fast Switching Speed * Low On-Resistance * Low Voltage Driver APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switchi

文件：659.22 Kbytes 頁(yè)數(shù)：5 Pages

WEITRON