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N Channel MOSFET

INTERFACE AND SWITCHING APPLICATION. FEATURES ? ESD Protected 2000V.(Human Body Model) ? High density cell design for low RDS(ON). ? Voltage controlled small signal switch. ? High-speed line driver. ? Low-side loadswitch.

文件：369.99 Kbytes 頁數(shù)：4 Pages

KECKEC CORPORATION

KEC株式會社

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers

文件：136.33 Kbytes 頁數(shù)：5 Pages

PANJIT

強茂

N-Ch Small Signal MOSFET with Gate Protection

FEATURES z 2 kV ESD Protection z Lower On-resistance: 2 Ω z Low Threshold: 2 V (Typ.) z Low Input Capacitance: 25 pF z Fast Switching Performance: 25 nS z Low Input and Output Leakage APPLICATIONS z Direct Logic-Level Interface: TTL/CMOS z Drivers: Relays, Solenoi

文件：680.74 Kbytes 頁數(shù)：5 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

60V MOSFET

Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a

文件：573.13 Kbytes 頁數(shù)：5 Pages

Good-Ark

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Prot

文件：164.63 Kbytes 頁數(shù)：3 Pages

UTC

友順

MOSFET

RoHS Device N-Channel Halogen Free Features -Small Signal MOSFET. -ESD protected: 1000V.

文件：129.61 Kbytes 頁數(shù)：5 Pages

COMCHIP

典琦

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Prot

文件：164.63 Kbytes 頁數(shù)：3 Pages

UTC

友順

N-Channel MOSFET

Features ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? High density cell design for low RDS(ON) ? Voltage controlled small signal switch ? Rugged and reliable ? ESD Protected up to 2.5KV (HBM) ? Halogen free available upon request by adding suffix -HF

文件：520.77 Kbytes 頁數(shù)：3 Pages

MCC

美微科

絲?。?a target="_blank" title="Marking" href="/rk/marking.html">RK；Package：SOT-723；N-Channel Mosfet

Application ? Load/Power Switching ? Interfacing Switching ? Logic Level Shift

文件：1.85739 Mbytes 頁數(shù)：5 Pages

TECHPUBLIC

臺舟電子

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-723；N-Channel Enhancement Mode Field Effect Transistor

Features ? Low on resistance RDS(ON) ? Low gate threshold voltage ? Low input capacitance ? ESD protected up to 2KV

文件：198.59 Kbytes 頁數(shù)：3 Pages

GWSEMI

唯圣電子