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絲印：LW-；Package：SOT-23；60 V, 0.3 A N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ AEC-Q101 qua

文件：173.25 Kbytes 頁數(shù)：16 Pages

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60 V, 0.3 A N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ AEC-Q101 qua

文件：173.25 Kbytes 頁數(shù)：16 Pages

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絲?。?a target="_blank" title="Marking" href="/m8/marking.html">M8；Package：TSSOP6；60 V, 320 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technolog

文件：294.36 Kbytes 頁數(shù)：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

絲?。?a target="_blank" title="Marking" href="/m8-/marking.html">M8-；Package：SOT-363；60 V, 320 mA N-channel Trench MOSFET

General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ● Logic-level compatible ● Very fast switching ● Trench MOSFET technology ● AEC-

文件：382.95 Kbytes 頁數(shù)：16 Pages

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絲?。?a target="_blank" title="Marking" href="/z1/marking.html">Z1；Package：SOT-416；Logic-level compatible

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ AEC-Q101 quali

文件：332.82 Kbytes 頁數(shù)：16 Pages

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N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.250 Ampere FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Servo

文件：191.36 Kbytes 頁數(shù)：5 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor - 0.25Amp 60Volt

□ Feature - Small surface mounting type - High density cell design for low RDS(ON) - Suitable for high packing density - Rugged and reliable - High saturation current capability - Voltage controlled small signal switch □ Application - Servomotor control - Power MOSFET gate drivers - Othe

文件：184.33 Kbytes 頁數(shù)：5 Pages

SIRECT

矽萊克半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/z1/marking.html">Z1；Package：SOT416；60 V, 310 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? AEC-Q

文件：430.71 Kbytes 頁數(shù)：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

絲?。?a target="_blank" title="Marking" href="/zf/marking.html">ZF；Package：SOT666；60 V, 350 mA dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology 3. Ap

文件：272.01 Kbytes 頁數(shù)：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

絲?。?a target="_blank" title="Marking" href="/zf/marking.html">ZF；Package：SOT-666；60 V, 350 mA N-channel Trench MOSFET

General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ● Logic-level compatible ● Very fast switching ● Trench MOSFET technology

文件：168.81 Kbytes 頁數(shù)：16 Pages

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