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N-Channel Enhancement Mode Field Effect Transistor

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Ultra-Small Surface Mount Package ? Lead Free/RoHS Compliant

文件：417.51 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/k72/marking.html">K72；Package：SOT-523；N-Channel Plastic- Encapsulate MOSFETS

FEATURES ● High Density Cell Design for Low RDS(ON) ● Voltage Controlled Small Signal Switch ● Rugged and Reliable ● High Saturation Current Capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：191.05 Kbytes 頁數(shù)：3 Pages

SECELECTRONICS

絲?。?a target="_blank" title="Marking" href="/k72/marking.html">K72；Package：SOT-523；SOT-523 Plastic-Encapsulate MOSFETS

MOSFET (N-Channel) FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.18325 Mbytes 頁數(shù)：5 Pages

TGS

絲?。?a target="_blank" title="Marking" href="/kn/marking.html">KN；Package：SOD-523；Voltage controlled small signal switch

Features ■ High density cell design for low RDS (ON) ■ Voltage controlled small signal switch ■ Rugged and reliable ■ High saturation current capability Applications ■ Load Switch for Portable Devices ■ DC/DC Converter

文件：1.2579 Mbytes 頁數(shù)：3 Pages

LEIDITECH

雷卯電子

N-Channel 60-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 25 ns ? Low Input and Output Leakage ? TrenchFET? Power MOSFET ? 1200V ESD Protection ? Compliant to RoHS Directive 2002/95/EC BENEFITS ? Low

文件：1.00398 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

MOSFET ( N-Channel )

FEATURES Power dissipation PD: 0.15 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

文件：196.81 Kbytes 頁數(shù)：2 Pages

WINNERJOIN

永而佳

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 115mA ● RDS(ON)

文件：1.11805 Mbytes 頁數(shù)：2 Pages

KEXIN

科信電子

SOT-523 Plastic-Encapsulate MOSFETS

MOSFET (N-Channel) FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffi

文件：359.47 Kbytes 頁數(shù)：2 Pages

WILLASWILLAS ELECTRONIC CORP

威倫威倫電子股份有限公司

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Ultra-Small Surface Mount Package ? Lead Free/RoHS Compliant (Note 2) ? Qualified to AEC-Q101 Standards for High Reliability ? Green Device (Notes 3 and 4)

文件：89.55 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導(dǎo)體

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

文件：64.519 Kbytes 頁數(shù)：6 Pages

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體