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2N7002LT3G

Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23

Small Signal MOSFET 60 V, 115 mA, N?Channel SOT?23 Features ? Pb?Free Packages are Available

文件：58.68 Kbytes 頁(yè)數(shù)：4 Pages

ONSEMI

安森美半導(dǎo)體

2N7002LT3G

絲?。?a target="_blank" title="Marking" href="/702m/marking.html">702M；Package：SOT-23；MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA

Features ? 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable (2V7002L) ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

文件：265.3 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

2N7002LT7G

絲?。?a target="_blank" title="Marking" href="/702m/marking.html">702M；Package：SOT-23；MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA

Features ? 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable (2V7002L) ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

文件：265.3 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

2N7002LT7H

絲?。?a target="_blank" title="Marking" href="/702m/marking.html">702M；Package：SOT-23；MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA

Features ? 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable (2V7002L) ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

文件：265.3 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

2N7002M1PT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.115 Ampere FEATURE * Small surface mounting type. (FBPT-723) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Ser

文件：186.65 Kbytes 頁(yè)數(shù)：3 Pages

CHENMKO

力勤

2N7002MTF

絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-23；Advanced Small Signal MOSFET

BVDSS = 60 V RDS(on) = 5.0 ? ID = 200 mA FEATURES ● Lower RDS(on) ● Improved Inductive Ruggedness ● Fast Switching Times ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

文件：162.29 Kbytes 頁(yè)數(shù)：4 Pages

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

2N7002N1PT

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.250 Ampere FEATURE * Small surface mounting type. (FBPT-923) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Ser

文件：133.05 Kbytes 頁(yè)數(shù)：4 Pages

CHENMKO

力勤

2N7002NXAK

絲?。?a target="_blank" title="Marking" href="/cm/marking.html">CM；Package：SOT23；60 V, single N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Very fast switching ? Trench MOSFET technology ? ESD protected 3. Applications

文件：279.69 Kbytes 頁(yè)數(shù)：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

2N7002NXBK

絲?。?a target="_blank" title="Marking" href="/4r/marking.html">4R；Package：SOT23；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? Elect

文件：288.98 Kbytes 頁(yè)數(shù)：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

2N7002P

絲印：LW；Package：SOT23；60 V, 360 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? AEC

文件：283.93 Kbytes 頁(yè)數(shù)：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    2N7002E

  • 制造商：

    ANBON SEMICONDUCTOR (INT'L) LIMITED

  • 類(lèi)別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個(gè)

  • 包裝：

    管件

  • 描述：

    N-CHANNEL SMD MOSFET ESD PROTECT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD
17+
NA
6200
100%原裝正品現(xiàn)貨
 詢(xún)價(jià)
12+
SOT-232
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢(xún)價(jià)
PHI
24+/25+
2724
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢(xún)價(jià)
恩XP
23+
SOT23
12300
詢(xún)價(jià)
PANJIT強(qiáng)
13+
9425
原裝分銷(xiāo)
 詢(xún)價(jià)
PHI
24+
TO-251
2147
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
DIODES
2020+
SOT-323
12783
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢(xún)價(jià)
CHENMKO
24+
SOT-363SOT-323-6
9200
新進(jìn)庫(kù)存/原裝
 詢(xún)價(jià)
恩XP
16+
NA
8800
誠(chéng)信經(jīng)營(yíng)
 詢(xún)價(jià)
VISHAY
23+
SOT-23
60000
原裝正品,假一罰十
 詢(xún)價(jià)
更多2N7002_供應(yīng)商 更新時(shí)間2025-8-8 8:31:00

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