最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

<abbr id="qsim8"><fieldset id="qsim8"></fieldset></abbr>

首頁 >2N7002_>規(guī)格書列表

零件型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
2N7002K-AU_T0_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_T0_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_T1_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_T1_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_T2_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_T2_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_TD_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_TD_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_TU_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT
2N7002K-AU_TU_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3Ω ? RDS(ON), VGS@4.5V,IDS@200mA=4Ω ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 頁數(shù)：7 Pages	PANJIT 強(qiáng)茂	PANJIT

<<<22 23 24 25 262728 29 30 31 32 >>>

產(chǎn)品屬性

產(chǎn)品編號(hào)：
2N7002E
制造商：
ANBON SEMICONDUCTOR (INT'L) LIMITED
類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個(gè)
包裝：
管件
描述：
N-CHANNEL SMD MOSFET ESD PROTECT

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	2N7002W	FAIRCHILD	17+	NA	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市勤思達(dá)科技有限公司	2N7002E		12+	SOT-232	15000	全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。	詢價(jià)
深圳市聯(lián)世界科技有限公司	2N7002E	PHI	24+/25+		2724	原裝正品現(xiàn)貨庫存價(jià)優(yōu)	詢價(jià)
深圳市昌和盛利電子有限公司	2N7002K	恩XP	23+	SOT23	12300		詢價(jià)
深圳市粵科源興科技有限公司	2N7002K	PANJIT強(qiáng)	13+		9425	原裝分銷	詢價(jià)
深圳市弘為電子有限公司	2N7002F	PHI	24+	TO-251	2147	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市卓越微芯電子有限公司	2N7002W	DIODES	2020+	SOT-323	12783	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市一線半導(dǎo)體有限公司	2N7002S	CHENMKO	24+	SOT-363SOT-323-6	9200	新進(jìn)庫存/原裝	詢價(jià)
深圳市利加科技有限公司	2N7002E	恩XP	16+	NA	8800	誠信經(jīng)營	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	2N7002K	VISHAY	23+	SOT-23	60000	原裝正品,假一罰十	詢價(jià)

更多2N7002_供應(yīng)商更新時(shí)間2025-8-6 16:10:00

客戶服務(wù) 網(wǎng)站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投訴建議：kf@114ic.com

Copyright ? 2003-2025 114ic.com All Rights Reserved 粵ICP備05011613號(hào) 粵公網(wǎng)安備 44030402000933號(hào)

<dl id="oy6qo"><xmp id="oy6qo"></xmp></dl>

<code id="oy6qo"><dd id="oy6qo"></dd></code>

<abbr id="oy6qo"></abbr>