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IRG4BC30UPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30UPBF

UltraFastSpeedIGBT

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage ?Lead-Free Bene

IRF

International Rectifier

IRG4BC30US

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage Benefits ?Generati

IRF

International Rectifier

IRG4BC30U-S

INSULATEDGATEBIPOLARTRANSISTORUltraFastSpeedIGBT(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage Benefits ?Generati

IRF

International Rectifier

IRG4BC30U-SPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage ?Lead-Free Benefit

IRF

International Rectifier

IRG4BC30W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign

IRF

International Rectifier

IRG4BC30W

INSULATEDGATEBIPOLARTRANSISTOR

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50%reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4BC30WPBF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

IRF

International Rectifier

IRG4BC30WPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30WS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.10V,@Vge=15V,Ic=12A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTde

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRG4BC30KDSTRRP

  • 功能描述：

    IGBT 模塊 600V ULTRAFAST 8-25 KHZ COPACK IGBT

  • RoHS：

    否

  • 制造商：

    Infineon Technologies

  • 產(chǎn)品：

    IGBT Silicon Modules

  • 配置：

    Dual 集電極—發(fā)射極最大電壓

  • VCEO：

    600 V

  • 集電極—射極飽和電壓：

    1.95 V 在25

  • C的連續(xù)集電極電流：

    230 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    445 W

  • 最大工作溫度：

    + 125 C

  • 封裝/箱體：

    34MM

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
20+
TO-220
12560
一級代理品牌原裝正品
 詢價
IR
2020+
TO-263
9600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
INFINEON/英飛凌
25+
TO-263
32360
INFINEON/英飛凌全新特價IRG4BC30KDSTRRP即刻詢購立享優(yōu)惠#長期有貨
 詢價
INFINEON/英飛凌
24+
TO-263
6400
只做原廠渠道 可追溯貨源
 詢價
INFINEON/英飛凌
2021+
TO-263
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
INFINEON/英飛凌
24+
TO-263
159944
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
24+
TO-263
45000
IR代理原包原盒,假一罰十。最低價
 詢價
IR
24+
TO-263
6400
只做原裝假一賠十
 詢價
INFINEON/英飛凌
20+
TO-263
6400
原裝優(yōu)勢庫存，有意請來電或QQ微信溝通。
 詢價
更多IRG4BC30KDSTRRP供應(yīng)商 更新時間2025-7-27 15:48:00

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