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IRG4BC30US

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A)

Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardD2Pakpackage Benefits ?Generati

IRF

International Rectifier

IRG4BC30W

INSULATEDGATEBIPOLARTRANSISTOR

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50%reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4BC30W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTdesign

IRF

International Rectifier

IRG4BC30WPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30WPBF

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

IRF

International Rectifier

IRG4BC30WS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.10V,@Vge=15V,Ic=12A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTde

IRF

International Rectifier

IRG4BC30W-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.10V,@Vge=15V,Ic=12A)

Features ?DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications ?Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBTde

IRF

International Rectifier

IRG4BC30W-SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4BC30W-SPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?DesignedexpresslyforSwitch-ModePower SupplyandPFC(powerfactorcorrection) applications ?Industry-benchmarkswitchinglossesimprove efficiencyofallpowersupplytopologies ?50reductionofEoffparameter ?LowIGBTconductionlosses ?Latest-generationIGBT

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
Infineon Technologies
22+
D2PAK
9000
原廠渠道,現(xiàn)貨配單
詢價
Infineon Technologies
23+
D2PAK
9000
原裝正品,支持實單
詢價
IR
23+
TO-263
8000
只做原裝現(xiàn)貨
詢價
IR
23+
TO-263
7000
詢價
IR
23+
TO-263
35890
詢價
IR
05+
原廠原裝
3701
只做全新原裝真實現(xiàn)貨供應
詢價
IR
24+
原廠封裝
23
原裝現(xiàn)貨假一罰十
詢價
INFINEON
1503+
TO-263
3000
就找我吧!--邀您體驗愉快問購元件!
詢價
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細信息,
詢價
更多IRG4BC30US供應商 更新時間2025-7-26 9:03:00