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首頁 >IRG4BC30>規(guī)格書列表

零件型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
IRG4BC30FD-S	文件：1.25649 Mbytes Page：11 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3. ?IGBTco-packagedwithHyperfastFREDdiodesforultral	IRF International Rectifier	IRF
IRG4BC30FD-SPBF	文件：1.17757 Mbytes Page：12 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter. parameterdistributionandhigherefficiencythan Generation3. ?IGBTco-packagedwithHyperfastFREDdiodesforultra	IRF International Rectifier	IRF
IRG4BC30FPBF	文件：218.21 Kbytes Page：8 Pages	Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage ?Lead-Free Benefits ?Generatio	IRF International Rectifier	IRF
IRG4BC30K	文件：137.95 Kbytes Page：8 Pages	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious	IRF International Rectifier	IRF
IRG4BC30KD	文件：196.13 Kbytes Page：10 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) ShortCircuitRatedUltraFastIGBT Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations	IRF International Rectifier	IRF
IRG4BC30KDPBF	文件：321.45 Kbytes Page：11 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast 1GBT Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?tighterparameterdistributionandhigherefficiencythan previousgenerations ?IGBTco-packag	IRF International Rectifier	IRF
IRG4BC30KDS	文件：225.23 Kbytes Page：10 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations ?IGBTco-packagedwithHEXFREDTMul	IRF International Rectifier	IRF
IRG4BC30KD-S	文件：225.23 Kbytes Page：10 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations ?IGBTco-packagedwithHEXFREDTMul	IRF International Rectifier	IRF
IRG4BC30KD-SPBF	文件：350.48 Kbytes Page：10 Pages	INSUKATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations ?IGBTco-packagedwithHEXFREDTMul	IRF International Rectifier	IRF
IRG4BC30KD-STRR	文件：225.23 Kbytes Page：10 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) Features ?Highshortcircuitratingoptimizedformotorcontrol,tsc=10μs,@360VVCE(start),TJ=125°C,VGE=15V ?Combineslowconductionlosseswithhighswitchingspeed ?tighterparameterdistributionandhigherefficiencythanpreviousgenerations ?IGBTco-packagedwithHEXFREDTMul	IRF International Rectifier	IRF

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技術(shù)參數(shù)

Technology?：
IGBT Gen 4
Switching Frequency?min?max：
8.0kHz?30.0kHz
Package?：
TO-220
Voltage Class?max：
600.0V
IC(@100°)?max：
17.0A
IC(@25°)?max：
31.0A
ICpuls?max：
124.0A
Ptot?max：
100.0W
VCE(sat)?：
1.59V?
Eon?：
0.23mJ?
Eoff(Hard Switching)?：
1.18mJ?
td(on)?：
20.0ns?
tr?：
16.0ns?
td(off)?：
290.0ns?
tf?：
350.0ns?
QGate?：
67.0nC?
Ets??(max)：
1.41mJ?(2.0mJ)
Switching Frequency?：
Gen 4 8-30 kHz
VCE?max：
600.0V

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市錦喆鴻電子有限公司	IRG4BC30	IR	20+		9986		詢價
深圳市勤思達(dá)科技有限公司	IRG4BC30	IR	15+	TO-220	11560	全新原裝,現(xiàn)貨庫存,長期供應(yīng)	詢價
深圳市永貝爾科技有限公司	IRG4BC30	IRF	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費送樣	詢價
深圳市芯澤盛世科技有限公司	IRG4BC30	IR	25+		8880	原裝認(rèn)準(zhǔn)芯澤盛世！	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	IRG4BC30	IR	23+		10000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳市威雅利發(fā)展有限公司	IRG4BC30	IR	10+	TO-263	550	一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價
深圳市河鋒鑫科技有限公司	IRG4BC30	IR	22+	SOT-263	6000	終端可免費供樣,支持BOM配單	詢價
深圳市創(chuàng)新跡電子有限公司	IRG4BC30	IR	23+		6000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價
深圳市安富世紀(jì)電子有限公司	IRG4BC30	IR	23+		6000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價
深圳市明嘉萊科技有限公司	IRG4BC30	IR	25+	NV	860000	明嘉萊只做原裝正品現(xiàn)貨	詢價

更多IRG4BC30供應(yīng)商更新時間2025-7-29 11:14:00

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