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IRG4BC30

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff

IRG4BC30

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Features ?Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V ?Combineslowconductionlosseswithhigh switchingspeed ?Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRG4BC30

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRG4BC30

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A);

IRG4BC30F

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff

IRG4BC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRG4BC30FD

600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; ? 對中等工作頻率進行了優(yōu)化\n? 參數(shù)分布更緊湊，效率更高\n? 與 HEXFREDTM 超快、超軟恢復(fù)反并聯(lián)二極管聯(lián)合封裝的 IGBT，在橋配置中使用\n? 行業(yè)標(biāo)準(zhǔn) TO-220AB 封裝\n? 無鉛\n\n優(yōu)勢:\n? IGBT 提供可實現(xiàn)的出色效率\n? 針對特定應(yīng)用條件進行過優(yōu)化的 IGBT\n? HEXFRED 二極管與 IGBT 并用優(yōu)化。恢復(fù)特性最小化，對緩沖的要求更少甚至不需要。\n? 旨在“直接替代”同等行業(yè)內(nèi)標(biāo)準(zhǔn)的第三代 IR IGBT\n;

600V IGBT 與快速 1-8 kHz 軟恢復(fù)二極管聯(lián)合封裝到 TO-220AB 封裝中。\n

IRG4BC30FD1

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

IRG4BC30FD1PBF

Fast CoPack IGBT

Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHyperfastFREDdiodesforultralo

IRG4BC30FDPBF

Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythan