最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

IRG4BC30F

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-220ABpackage Benefits ?Generation4IGBTsoff

IRG4BC30F

Fit Rate / Equivalent Device Hours

IRG4BC30F

INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC30F

600V 快速 1-8 kHz 分立 IGBT，采用 TO-220AB 封裝;

IRG4BC30F

Package：TO-220-3；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 31A 100W TO220AB

IRG4BC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRG4BC30FD1

INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHHYPERFASTDIODE

IRG4BC30FD1PBF

Fast CoPack IGBT

Features ?Fast:Optimizedformediumoperatingfrequencies (1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IGBTco-packagedwithHyperfastFREDdiodesforultralo

IRG4BC30FDPBF

Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )

FastCoPackIGBT INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythan

IRG4BC30FD-S

600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; ? 對(duì)中等工作頻率進(jìn)行了優(yōu)化\n? 參數(shù)分布更緊湊，效率更高\(yùn)n? 與 HEXFREDTM超快、超軟恢復(fù)反并聯(lián)二極管聯(lián)合封裝的 IGBT\n? 無(wú)鉛\n\n優(yōu)勢(shì):\n? IGBT 提供可實(shí)現(xiàn)的出色效率\n? 針對(duì)特定應(yīng)用條件進(jìn)行過優(yōu)化的 IGBT\n? HEXFRED 二極管與 IGBT 并用優(yōu)化?；謴?fù)特性最小化，對(duì)緩沖的要求更少甚至不需要。\n? 旨在“直接替代”同等行業(yè)內(nèi)標(biāo)準(zhǔn)的第三代 IR IGBT\n;

600V IGBT 與 hyperfast 1-8 kHz 二極管聯(lián)合封裝到 D2-Pak 封裝中\(zhòng)n