描述 Description

Qorvo's UF3SC065007K4S 650 V, 6.7 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

特性 Features

? On-resistance (RDS(on)): 6.7 mohm (typ)
? Maximum operating temperature: 175 °C
? Excellent reverse recovery
? Low gate charge
? Low intrinsic capacitance
? ESD protected, HBM class 3

應(yīng)用 Application

? EV Charging
? PV Inverters
? Switched-Mode Power Supplies
? Power Factor Correction Modules
? Motor Drives
? Induction Heating