描述 Description

Qorvo's UF3C120080K4S 1200 V, 80 mohm FET products co-package its high-performance Gen 3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

特性 Features

? On-resistance RDS(on): 80 mohm (typ)
? Maximum operating temperature: 175 °C
? Excellent reverse recovery
? Low gate charge
? Low intrinsic capacitance
? ESD protected, HBM class 2

應(yīng)用 Application

? EV Charging
? PV Inverters
? Switched-Mode Power Supplies
? Power Factor Correction Modules
? Motor Drives
? Induction Heating