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TK31E60X

Marking：TK31E60X；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA)

TK31V60W

Marking：TK31V60W；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.078Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1.5mA)

TK31V60W5

Marking：TK31V60W5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=135ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.087Ω(typ.) (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=10V,ID=1.5mA)

TK31V60X

Marking：TK31V60X；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.078Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA)

TK370A60F

Marking：TK370A60F；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)EasytocontrolGateswitching (2)Lowdrain-sourceon-resistance:RDS(ON)=0.3Ω(typ.) (3)Enhancementmode:Vth=2to4V(VDS=10V,ID=2.04mA)

TK380P60Y

Marking：TK380P60Y；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.29Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.36mA)

TK380P65Y

Marking：TK380P65Y；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.29Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.36mA)

TK3P80E

Marking：TK3P80E；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=3.9Ω(typ.) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=640V) (3)Enhancementmode:Vth=2.5to4.0V(VDS=10V,ID=0.3mA)

TK3R1P04PL

Marking：TK3R1P04PL；Package：DPAK；MOSFETs Silicon N-channel MOS

1.Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=19nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS=

TK4P60D

Marking：TK4P60D；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=1.4Ω(typ.) (2)Highforwardtransferadmittance:|Yfs|=2.5S(typ.) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) (4)Enhancementmode:Vth=2.4to4.4V(VDS=10V,ID=1