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TK165V60Z1

Marking：TK165V60Z1；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.138Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.61mA)

TK165V65Z5

Marking：TK165V65Z5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=100ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.127Ω(typ.) (3)High-speedswitchingpropertieswithlowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=0.73mA

TK16G60W5

Marking：TK16G60W5；Package：D2PAK；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=100ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.18Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=

TK16V60W

Marking：TK16V60W；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.16Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.79mA)

TK16V60W5

Marking：TK16V60W5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=100ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.196Ω(typ.) (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=10V,ID=0.79mA)

TK170V65Z

Marking：TK170V65Z；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.142Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)

TK17V65W

Marking：TK17V65W；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.175Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=0.9mA)

TK200V60Z1

Marking：TK200V60Z1；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.166Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.48mA)

TK200V65Z5

Marking：TK200V65Z5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=95ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.154Ω(typ.) (3)High-speedswitchingpropertieswithlowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=0.61mA)

TK20V60W

Marking：TK20V60W；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.136Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1mA)