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TK20V60W5

Marking:TK20V60W5;Package:DFN8x8;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=110ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.156Ω(typ.) (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK210V65Z

Marking:TK210V65Z;Package:DFN8x8;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.175Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.61mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK22V65X5

Marking:TK22V65X5;Package:DFN8x8;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.14Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4.5V(VDS=10V,ID=1.1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK25V60X

Marking:TK25V60X;Package:DFN8x8;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.11Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK25V60X5

Marking:TK25V60X5;Package:DFN8x8;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=120ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.125Ω(typ.) (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS=10V,ID=1.2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK28V65W

Marking:TK28V65W;Package:DFN8x8;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.099Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.6mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK28V65W5

Marking:TK28V65W5;Package:DFN8x8;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.115Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4.5V(VDS=10V,ID=1.6mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK290P60Y

Marking:TK290P60Y;Package:DPAK;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.23Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.45mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK290P65Y

Marking:TK290P65Y;Package:DPAK;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.23Ω(typ.)byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.45mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK2P90E

Marking:TK2P90E;Package:DPAK;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=4.7Ω(typ.) (2)Lowleakagecurrent:IDSS=10μA(max)(VDS=720V) (3)Enhancementmode:Vth=2.5to4.0V(VDS=10V,ID=0.2mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

產(chǎn)品屬性

  • 產(chǎn)品編號:

    TK

  • 制造商:

    Omron Automation and Safety

  • 類別:

    工業(yè)自動化與控制 > 機器安全 - 配件

  • 包裝:

    散裝

  • 描述:

    TRIM KIT FOR 1-2460, AND 1-1854

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