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SZ1SMA60AT3G

Marking：TK；Package：SMA；TVS Diodes Surface Mount > 400W > SZ1SMA Series

AAT1235IRN-T1

Marking：TKXYY；Package：TDFN34-16；High Efficiency White LED Drivers for Backlight and Keypad

Features ?InputSupplyVoltageRange:2.7Vto5.5V ?MaximumBoostOutputDrive:Upto24Vat100mA ?Upto85EfficientOperation ?Upto2MHzSwitchingFrequencywithSmallInductor ?User-ProgrammableFull-ScaleLEDCurrent,Upto 30mA ?Single-WireAS2CwireSerialInterface ?FiveAdd

DMN62D0UT-13

Marking：TK9；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ESDProtectedUpTo1kV ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomo

DMN62D0UT-7

Marking：TK9；Package：SOT523；N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ESDProtectedUpTo1kV ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomo

SP3423-02UTG

Marking：TKD；Package：UDFN-6L；SP3423, 0.2pF, /-10kV Diode Array

Description TheSP3423integrates2channelsoflowcapacitance steeringdiodesandandanavalanchebreakdowndiode toprovideprotectionforelectronicequipmentthatmay experiencedestructiveelectrostaticdischarges(ESD).The SP3423cansafelyabsorbrepetitiveESDstrikesabove thema

TK085V60Z1

Marking：TK085V60Z1；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.071Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.17mA)

TK095V65Z5

Marking：TK095V65Z5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=115ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.079Ω(typ.) (3)High-speedswitchingpropertieswithlowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=1.27mA

TK099V65Z

Marking：TK099V65Z；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.08Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.27mA)

TK105V60Z1

Marking：TK105V60Z1；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.088Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.93mA)

TK10P50W

Marking：TK10P50W；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA)