描述 Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).

特性 Features

? High input impedance (voltage driven)
? Off losses include tail current
? Low on-voltage drop (Vcesat)
? High current capability
? Low gate charge

簡(jiǎn)介

STGE200NB60S屬于分立半導(dǎo)體產(chǎn)品的晶體管-IGBT-模塊。由制造生產(chǎn)的STGE200NB60S晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導(dǎo)體器件，主要用作電子開(kāi)關(guān)，兼具高效率和快速切換優(yōu)點(diǎn)。作為模塊，IGBT 配置為非對(duì)稱式橋； 升壓、降壓和制動(dòng)斬波器；全橋、三電平和三相逆變器。有些器件內(nèi)置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進(jìn)行區(qū)分。