首頁>SCT040W65G3-4>規(guī)格書詳情
SCT040W65G3-4數(shù)據(jù)手冊ST中文資料規(guī)格書
SCT040W65G3-4規(guī)格書詳情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
? Very low RDS(on) over the entire temperature range
? High speed switching performances
? Very fast and robust intrinsic body diode
? Very high operating junction temperature capability (TJ = 200 °C)
? Source sensing pin for increased efficiency
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO-263-7 |
25800 |
原裝正品支持實單 |
詢價 | ||
ST/意法半導體 |
25+ |
原廠封裝 |
10280 |
原廠授權代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
AUK |
25+ |
TO220F |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
24+ |
50 |
詢價 | |||||
STMicroelectronics |
23+ |
HU3PAK-7 |
3652 |
原廠正品現(xiàn)貨供應SIC全系列 |
詢價 | ||
ST/意法半導體 |
25+ |
原廠封裝 |
10280 |
詢價 | |||
ST/意法半導體 |
25+ |
原廠封裝 |
9999 |
詢價 | |||
ST |
20000 |
原裝現(xiàn)貨,可追溯原廠渠道 |
詢價 | ||||
ST |
22+ |
BGA |
1000 |
原裝正品碳化硅 |
詢價 | ||
ST |
33724 |
只做正品 |
詢價 |
