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SCT027W65G3-4AG數(shù)據(jù)手冊ST中文資料規(guī)格書
| 廠商型號 |
SCT027W65G3-4AG |
| 功能描述 | 汽車級碳化硅功率MOSFET，650 V、40 mOhm（典型值），110 A，HiP247-4封裝 |
| 制造商 | ST STMicroelectronics |
| 中文名稱 | 意法半導(dǎo)體 意法半導(dǎo)體集團(tuán) |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | 2025-8-13 14:14:00 |
| 人工找貨 | SCT027W65G3-4AG價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
SCT027W65G3-4AG規(guī)格書詳情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
? AEC-Q101 qualified
? Very low RDS(on) over the entire temperature range
? High speed switching performances
? Very fast and robust intrinsic body diode
? Very high operating junction temperature capability (TJ = 200 °C)
? Source sensing pin for increased efficiency
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
23+ |
SMD |
3652 |
原廠正品現(xiàn)貨供應(yīng)SIC全系列 |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
10280 |
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！ |
詢價(jià) | ||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
9999 |
詢價(jià) | |||
ST(意法) |
23+ |
10000 |
只做全新原裝,實(shí)單來 |
詢價(jià) | |||
ST |
20000 |
原裝現(xiàn)貨,可追溯原廠渠道 |
詢價(jià) | ||||
ST |
22+ |
BGA |
1000 |
原裝正品碳化硅 |
詢價(jià) | ||
ST |
66243 |
只做正品 |
詢價(jià) | ||||
ST |
2404+ |
TO-247 |
30 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
AIM |
24+ |
8215 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | |||
ST |
22+ |
N/A |
17000 |
只做原裝正品 |
詢價(jià) |
