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SCT016H120G3AG數(shù)據(jù)手冊ST中文資料規(guī)格書
SCT016H120G3AG規(guī)格書詳情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
? AEC-Q101 qualified
? Very low RDS(on) over the entire temperature range
? High speed switching performances
? Very fast and robust intrinsic body diode
? Source sensing pin for increased efficiency
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
9999 |
詢價 | |||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
10280 |
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
ST |
22+ |
N/A |
8000 |
只做原裝正品 |
詢價 | ||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
10280 |
詢價 | |||
ST(意法) |
2511 |
4945 |
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價 |
詢價 | |||
STM |
兩年內(nèi) |
NA |
520 |
實單價格可談 |
詢價 | ||
24+ |
789 |
詢價 | |||||
ST |
25+ |
30000 |
原裝現(xiàn)貨,可追溯原廠渠道 |
詢價 | |||
ST |
22+ |
BGA |
1000 |
原裝正品碳化硅 |
詢價 | ||
ST |
47920 |
只做正品 |
詢價 |
