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SCT040H65G3SAG數(shù)據(jù)手冊ST中文資料規(guī)格書
SCT040H65G3SAG規(guī)格書詳情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
? AEC-Q101 qualified
? Very low RDS(on) over the entire temperature range
? High speed switching performances
? Very fast and robust intrinsic body diode
? Source sensing pin for increased efficiency
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
BGA |
1000 |
原裝正品碳化硅 |
詢價 | ||
STMicroelectronics |
24+ |
原廠封裝 |
12634 |
有掛就有貨只做原裝正品 |
詢價 | ||
ST(意法) |
23+ |
10000 |
只做全新原裝,實單來 |
詢價 | |||
ST/意法 |
24+ |
TO |
60000 |
全新原裝現(xiàn)貨 |
詢價 | ||
ST/意法半導體 |
25+ |
原廠封裝 |
10280 |
詢價 | |||
STN |
2405+ |
原廠封裝 |
53931 |
只做原裝優(yōu)勢現(xiàn)貨庫存 渠道可追溯 |
詢價 | ||
STMicroelectronics |
23+ |
H2PAK-2 |
3652 |
原廠正品現(xiàn)貨供應(yīng)SIC全系列 |
詢價 | ||
ST |
兩年內(nèi) |
NA |
326 |
實單價格可談 |
詢價 | ||
ST/意法半導體 |
25+ |
原廠封裝 |
10280 |
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
24+ |
100 |
詢價 |
