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SCT018W65G3AG數(shù)據(jù)手冊ST中文資料規(guī)格書
SCT018W65G3AG規(guī)格書詳情
描述 Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
特性 Features
? AEC-Q101 qualified
? Very fast and robust intrinsic body diode
? Extremely low gate charge and input capacitance
? Very high operating junction temperature capability (TJ = 200 °C)
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
SMD |
87500 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
STM |
兩年內(nèi) |
NA |
520 |
實單價格可談 |
詢價 | ||
24+ |
20 |
詢價 | |||||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
10280 |
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
ST/意法半導(dǎo)體 |
25+ |
原廠封裝 |
9999 |
詢價 | |||
ST |
22+ |
30000 |
原裝現(xiàn)貨,可追溯原廠渠道 |
詢價 | |||
ST |
22+ |
BGA |
1000 |
原裝正品碳化硅 |
詢價 | ||
ST |
47920 |
只做正品 |
詢價 | ||||
AIM |
24+ |
8215 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | |||
ST(意法) |
2511 |
4945 |
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價 |
詢價 |
