IRFZ34S中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
IRFZ34S規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAKis a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application.
The through-hole version (IRFZ34L, SiHFZ34L) is available for low-profile applications.
FEATURES
? Halogen-free According to IEC 61249-2-21 Definition
? Advanced Process Technology
? Surface Mount
? Low-Profile Through-Hole (IRFZ34L, SiHFZ34L)
? 175 °C Operating Temperature
? Fast Switching
? Compliant to RoHS Directive 2002/95/EC
產(chǎn)品屬性
- 型號：
IRFZ34S
- 功能描述：
MOSFET N-Chan 60V 30 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
800 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
VB |
21+ |
D2PAK |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
08+ |
5200 |
普通 |
詢價 | |||
IR |
01+ |
TO-263 |
363 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR/VISHAY |
22+ |
SOT263 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
IR |
1822+ |
SOT263 |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
IR |
23+ |
TO-263 |
35890 |
詢價 | |||
VISHAY/威世 |
2022+ |
TO-263 |
30000 |
進口原裝現(xiàn)貨供應,原裝 假一罰十 |
詢價 | ||
IR |
24+ |
5200 |
只做原廠渠道 可追溯貨源 |
詢價 | |||
IR |
24+ |
TO-263 |
36800 |
詢價 |
