IRFD220中文資料INTERSIL數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
IRFD220 |
| 功能描述 | 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET |
| 文件大小 |
51.93 Kbytes |
| 頁面數(shù)量 |
6 頁 |
| 生產(chǎn)廠商 | INTERSIL |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-8-10 23:01:00 |
| 人工找貨 | IRFD220價格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
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更多IRFD220規(guī)格書詳情
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
特性 Features
? 0.8A, 200V
? rDS(ON) = 0.800?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號：
IRFD220
- 功能描述：
MOSFET N-Chan 200V 0.8 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
333 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
1950+ |
DIP-4 |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
IR |
23+ |
HEXDIP |
19526 |
詢價 | |||
IR |
01+P |
DIP-4 |
26900 |
詢價 | |||
IR |
25+23+ |
DIP-4 |
15829 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
IR |
22+ |
HD-1 |
8000 |
原裝正品支持實(shí)單 |
詢價 | ||
VISHAY/威世 |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
IR |
24+ |
DIP-4 |
26900 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IOR |
24+ |
DIP-4P |
340 |
詢價 | |||
IRFD220 |
100 |
100 |
詢價 |
