IRFD212中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號(hào) |
IRFD212 |
| 功能描述 | 0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS |
| 文件大小 |
360.56 Kbytes |
| 頁面數(shù)量 |
6 頁 |
| 生產(chǎn)廠商 | HARRIS |
| 數(shù)據(jù)手冊 | |
| 更新時(shí)間 | 2025-8-10 20:44:00 |
| 人工找貨 | IRFD212價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
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更多IRFD212規(guī)格書詳情
These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
特性 Features
? 0.6A and 0.45A, 150V and 200V
? rDS(ON) = 1.5? and 2.4Ω
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards
產(chǎn)品屬性
- 型號(hào)：
IRFD212
- 制造商：
HARRIS
- 制造商全稱：
HARRIS
- 功能描述：
0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
DIP-4 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價(jià) | ||
VISHAY/威世 |
24+ |
NA/ |
2467 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
IR |
23+ |
HEXDIP |
19526 |
詢價(jià) | |||
IR |
22+ |
DIP-4 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
24+ |
DIP-4 |
13500 |
詢價(jià) | |||
IR-VISHAY |
25+ |
DIP4 |
19296 |
全新原裝正品支持含稅 |
詢價(jià) | ||
Vishay Siliconix |
2022+ |
4-DIP(0.300 |
38550 |
詢價(jià) | |||
IR |
23+ |
DIP-4 |
7000 |
詢價(jià) | |||
MOT |
23+ |
65480 |
詢價(jià) | ||||
IR |
01+ |
DIP-4 |
14600 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) |
