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首頁>IRFD214PBF>規(guī)格書詳情

IRFD214PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書

IRFD214PBF
廠商型號

IRFD214PBF

功能描述

HEXFET Power MOSFET

文件大小

923.6 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商

IRF

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-10 23:01:00

人工找貨

IRFD214PBF價格和庫存,歡迎聯(lián)系客服免費人工找貨

IRFD214PBF規(guī)格書詳情

VDSS = 250V

RDS(on) = 2.0?

ID = 0.45A

描述 Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.

● Dynamic dv/dt Rating

● Repetitive Avalanche Rated

● For Automatic Insertion

● End Stackable

● Fast Switching

● Ease of paralleling

● Simple Drive Requirements

● Lead-free

產(chǎn)品屬性

  • 型號:

    IRFD214PBF

  • 功能描述:

    MOSFET N-Chan 250V 0.45 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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