IRFD210中文資料INTERSIL數(shù)據(jù)手冊(cè)PDF規(guī)格書

廠商型號(hào) |
IRFD210 |
功能描述 | 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET |
文件大小 |
52.32 Kbytes |
頁(yè)面數(shù)量 |
6 頁(yè) |
生產(chǎn)廠商 | Intersil Corporation |
企業(yè)簡(jiǎn)稱 |
INTERSIL |
中文名稱 | Intersil Corporation官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-8-1 20:07:00 |
人工找貨 | IRFD210價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
相關(guān)芯片規(guī)格書
更多IRFD210規(guī)格書詳情
This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
特性 Features
? 0.6A, 200V
? rDS(ON) = 1.500?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號(hào):
IRFD210
- 功能描述:
MOSFET N-Chan 200V 0.6 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
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IR |
0507+ |
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577 |
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IR |
24+/25+ |
1208 |
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1023 |
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6528 |
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a |
20+ |
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2960 |
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IR歡迎訂購(gòu) |
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詢價(jià) | ||
IR |
2023+ |
HD-1 |
50000 |
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詢價(jià) | ||
IR特價(jià)歡迎訂購(gòu) |
25+23+ |
DIP-4 |
43402 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) |