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首頁(yè)>IRFD213>規(guī)格書(shū)詳情

IRFD213中文資料HARRIS數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRFD213
廠商型號(hào)

IRFD213

功能描述

0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS

文件大小

360.56 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商

HARRIS

數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-8-10 23:01:00

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IRFD213規(guī)格書(shū)詳情

These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

特性 Features

? 0.6A and 0.45A, 150V and 200V

? rDS(ON) = 1.5? and 2.4Ω

? Single Pulse Avalanche Energy Rated

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards

產(chǎn)品屬性

  • 型號(hào):

    IRFD213

  • 功能描述:

    MOSFET N-Chan 200V 0.6 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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