IRFD220中文資料威世科技數據手冊PDF規(guī)格書
IRFD220規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? For Automatic Insertion
? End Stackable
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
產品屬性
- 型號：
IRFD220
- 功能描述：
MOSFET N-Chan 200V 0.8 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
333 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
1950+ |
DIP-4 |
9852 |
只做原裝正品現貨!或訂貨假一賠十! |
詢價 | ||
IR |
23+ |
HEXDIP |
19526 |
詢價 | |||
IR |
01+P |
DIP-4 |
26900 |
詢價 | |||
IR |
25+23+ |
DIP-4 |
15829 |
絕對原裝正品全新進口深圳現貨 |
詢價 | ||
IR |
22+ |
HD-1 |
8000 |
原裝正品支持實單 |
詢價 | ||
VISHAY/威世 |
21+ |
NA |
12820 |
只做原裝,質量保證 |
詢價 | ||
IR |
24+ |
DIP-4 |
26900 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IOR |
24+ |
DIP-4P |
340 |
詢價 | |||
IRFD220 |
100 |
100 |
詢價 |
