描述 Description

A 60 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band.

特性 Features

? Easy power control
? Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
? Excellent ruggedness
? High efficiency
? Excellent thermal stability
? Designed for broadband operation (HF to 1000 MHz)
? Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

應(yīng)用 Application

? Industrial, scientific and medical applications
? Broadcast transmitter application

簡介

BLP10H660P屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由制造生產(chǎn)的BLP10H660P晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。