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絲?。?a target="_blank" title="Marking" href="/72kc/marking.html">72Kc；Package：SOT-323；N-Channel Enhancement Mode MOSFET

Features Low on-resistance ESD protected gate up to 2kV HBM High-speed switching Drive circuits can be simple Parallel use is easy

文件：1.83145 Mbytes 頁(yè)數(shù)：5 Pages

TECHPUBLIC

臺(tái)舟電子

SMD MOSFET

Features ? RDS(ON), VGS@10V, IDS@500mA=5 Ω ? RDS(ON), VGS@4.5V, IDS@75mA=7.5 Ω ? Advanced trench process technology. ? High density cell design for ultra low on-resistance. ? Specially designed for battery operated system, solid-state relays drivers, relays, displays, lamps, solenoids

文件：121.83 Kbytes 頁(yè)數(shù)：9 Pages

FORMOSA

美麗微半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Ultra-Small Surface Mount Package ? Available in Lead Free/RoHS Compliant Version (Note 2)

文件：197.33 Kbytes 頁(yè)數(shù)：4 Pages

DIODES

美臺(tái)半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Ultra-Small Surface Mount Package ? Available in Lead Free/RoHS Compliant Version (Note 2)

文件：197.33 Kbytes 頁(yè)數(shù)：4 Pages

DIODES

美臺(tái)半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ? N-Channel MOSFET ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? Small Surface Mount Package ? ESD Protected Gate 1KV ? Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to AEC-Q101 Standards for

文件：488.7 Kbytes 頁(yè)數(shù)：6 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/7wa/marking.html">7WA；Package：SOT323；N-CHANNEL ENHANCEMENT MODE MOSFET

Features ? N-Channel MOSFET ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? Small Surface Mount Package ? ESD Protected Gate 1KV ? Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to AEC-Q101 Standards for

文件：488.7 Kbytes 頁(yè)數(shù)：6 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/7wa/marking.html">7WA；Package：SOT323；N-CHANNEL ENHANCEMENT MODE MOSFET

Features ? N-Channel MOSFET ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? Small Surface Mount Package ? ESD Protected Gate 1KV ? Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to AEC-Q101 Standards for

文件：488.7 Kbytes 頁(yè)數(shù)：6 Pages

DIODES

美臺(tái)半導(dǎo)體

MOSFET

2N7002W-G (N-Channel) RoHS Device Features - High density cell design for low RDS(ON). - Voltage control small signal switch. - Rugged and reliable. - High saturation current capability.

文件：53.22 Kbytes 頁(yè)數(shù)：2 Pages

COMCHIP

典琦

300m Amps, 60 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ■ FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Control

文件：158.79 Kbytes 頁(yè)數(shù)：3 Pages

UTC

友順

MOSFET

Features - High density cell design for low RDS(ON). - Voltage controlled small signal switch. - Rugged and reliable. - High saturation current capability.

文件：480.21 Kbytes 頁(yè)數(shù)：5 Pages

COMCHIP

典琦