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絲印：2N；Package：SOT-323；N-Channel Enhancement Mode Field Effect Transistor

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Ultra-Small Surface Mount Package ? Lead Free/RoHS Compliant

文件：266.34 Kbytes 頁數：6 Pages

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

60V N-Channel Enhancement Mode MOSFET

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=5? ? RDS(ON), VGS@4.5V,IDS@75mA=7.5? ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solen

文件：161.83 Kbytes 頁數：5 Pages

PANJIT

強茂

300m Amps, 60 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ■ FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Control

文件：158.79 Kbytes 頁數：3 Pages

UTC

友順

Plastic-Encapsulated Transistors

MOSFET ( N-Channel ) FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：112.83 Kbytes 頁數：1 Pages

TEL

東電電子

絲?。?a target="_blank" title="Marking" href="/7002/marking.html">7002；Package：SOT-323；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：624.06 Kbytes 頁數：6 Pages

YANGJIE

揚州揚杰電子

Plastic-Encapsulate Mosfets

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage ? Ultra-Small Surface Mount Package Mechanical Data ? Case: SOT-323, Molded Plastic ? Terminals: Solderable per MIL-STD-202, Method 208 ? Terminal Connectio

文件：459.89 Kbytes 頁數：2 Pages

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 0.34 A (VGS = 10V) ● RDS(ON)

文件：1.31734 Mbytes 頁數：4 Pages

KEXIN

科信電子

MOSFET (N-Channel)

SOT-323 Plastic-Encapsulate MOSFETS MOSFET (N-Channel) V(BR)DSS RDS(on)MAX ID 60V 5Ω@10V 115mA 7Ω@5V

文件：1.90804 Mbytes 頁數：5 Pages

JIANGSU

長電科技

N-Channel MOSFET

Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：361.76 Kbytes 頁數：3 Pages

YFWDIODE

佑風微電子

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Mechanical Data Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal

文件：1.85407 Mbytes 頁數：3 Pages

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司