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2N7002K

N-CHannel Enhancement Mode MOSFET

HighSpeedSwitchingApplication Features ?ESDrating:1000V(HBM) ?LowOn-Resistance:RDS(on)

2N7002K

絲?。?a target="_blank" title="Marking" href="/-2k/marking.html">-2K；Package：SOT-23；N-channel TrenchMOS FET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelcompatible ■Veryfastswitching ■Subminiaturesurface-mountedpackage ■Gate-sourceElectroStaticDischarge(ESD)protectiondiodes Applicat

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2N7002K

N-Channel Enhancement MOSFET

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage ●ESDProtected2KVHBM

2N7002K

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-23；Plastic-Encapsulate MOSFETS

MOSFET(N-Channel) Features: 1.RDS(ON)islow; 2.Thecontroltriggerissensitive; 3.Withelectrostaticprotection; Applications: Usedforgeneralswitchingandphasecircuits.

2N7002K

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETs

N-channelMOSFET FEATURE ●HighdensitycelldesignforLowRDS（on） ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●ESDprotected APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002K

絲?。?a target="_blank" title="Marking" href="/702k/marking.html">702K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability ●HMBESDprotected(2000V) APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002K

絲?。?a target="_blank" title="Marking" href="/7002k/marking.html">7002K；Package：SOT-23；N-Channel Enhancement MOSFET

Features LowOn-Resistance:RDS(ON) LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected2KVHBM

2N7002K

TrenchMOS? logic level FET

1.1Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS?technology. 1.2Features 1.3Applications 1.4Quickreferencedata nLogiclevelcompatiblenVeryfastswitching nSubminiaturesurfacemountpackagenGate-sourceESDprotectiondiodes

2N7002K

絲印：7002；Package：SOT23；60V N-Channel Mosfet

Application Directlogic-levelinterface:TTL/CMOS Drivers:relays,solenoids,lamps,hammersdisplay, memories,transistors,etc. Batteryoperatedsystems Solid-staterelays

2N7002K

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-23；Plastic-Encapsulate MOSFET

Features ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapability. ?ESDprotected ?LoadSwitchforPortableDevices. ?DC/DCConverter.