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2N7002E

N-CHANNEL ENHANCEMENT-MODE MOSFET

Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

2N7002E

Super high dense cell design for low RDS (ON).

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23package.

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

2N7002E

N-CHANNEL ENHANCEMENT

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR ?LowOn-Resistance ?FastSwitchingSpeed ?Low-voltagedrive ?Easilydesigneddrivecircuits ?Pb-FreePackageisavailable. ?Canprotectagainststaticelectricity1KVwhen theproductisinuse. ?AEC-Q101Pass

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

2N7002E

N-Channel 60-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:25ns ?LowInputandOutputLeakage ?TrenchFET?PowerMOSFET ?1200VESDProtection ?ComplianttoRoHSDirective2002/95/EC BENEFITS ?Low

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

2N7002E

絲?。?a target="_blank" title="Marking" href="/-2e/marking.html">-2E；Package：SOT-23；N-channel TrenchMOS FET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Surface-mountedpackage ■Veryfastswitching ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-sp

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

2N7002E

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapaci

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

2N7002E

絲?。?a target="_blank" title="Marking" href="/7e/marking.html">7E**；Package：SOT-23；N-Channel 60-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:3? ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:7.5ns ?LowInputandOutputLeakage ?ComplianttoRoHSDirective2002/95/EC BENEFITS ?LowOffsetVoltage ?Low-Vo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

2N7002E

N-Channel Enhanceent Mode Field Effect Transistor

Features ●LowOn-Resistance:RDS(ON) ●LowGateThresholdVoltage ●LowInputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2N7002E

Small Signal MOSFET Single N??hannel, 60 V, 310 mA, 2.5 Ohm

Features ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?TrenchTechnology ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSComp

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N7002E_V01

Small Signal MOSFET Single N??hannel, 60 V, 310 mA, 2.5 Ohm

Features ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?TrenchTechnology ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSComp

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    2N7002E

  • 制造商：

    ANBON SEMICONDUCTOR (INT'L) LIMITED

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 單個(gè)

  • 包裝：

    管件

  • 描述：

    N-CHANNEL SMD MOSFET ESD PROTECT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD
17+
NA
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
12+
SOT-232
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
PHI
24+/25+
2724
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
恩XP
23+
SOT23
12300
詢價(jià)
PANJIT強(qiáng)
13+
9425
原裝分銷
 詢價(jià)
PHI
24+
TO-251
2147
原裝現(xiàn)貨假一罰十
 詢價(jià)
DIODES
2020+
SOT-323
12783
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
CHENMKO
24+
SOT-363SOT-323-6
9200
新進(jìn)庫存/原裝
 詢價(jià)
恩XP
16+
NA
8800
誠信經(jīng)營
 詢價(jià)
VISHAY
23+
SOT-23
60000
原裝正品,假一罰十
 詢價(jià)
更多2N7002_供應(yīng)商 更新時(shí)間2025-7-31 16:00:00

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