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2N7002ET1G

Small Signal MOSFET Single N??hannel, 60 V, 310 mA, 2.5 Ohm

Features ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?TrenchTechnology ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSComp

2N7002E-T1-GE3

N-Channel 60 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowOn-Resistance:3? ?LowThreshold:2V(typ.) ?LowInputCapacitance:25pF ?FastSwitchingSpeed:7.5ns ?LowInputandOutputLeakage ?ComplianttoRoHSDirective2002/95/EC BENEFITS ?LowOffsetVoltage ?Low-Vo

2N7002ET7G

Small Signal MOSFET Single N??hannel, 60 V, 310 mA, 2.5 Ohm

Features ?LowRDS(on) ?SmallFootprintSurfaceMountPackage ?TrenchTechnology ?SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC?Q101Qualifiedand PPAPCapable ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHSComp

2N7002F

絲?。?a target="_blank" title="Marking" href="/-7f/marking.html">-7F；Package：SOT-23；TrenchMOS Logic Level FET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Veryfastswitching ■Surface-mountedpackage ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-

PHI

2N7002-G

MOSFET

MOSFET(N-Channel) RoHSDevice Features Powerdissipation:0.35W

2N7002-G

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi

2N7002H

N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?MotorControl ?PowerManagementFunctions FeaturesandBenefits ?N-Channel

2N7002H

絲?。?a target="_blank" title="Marking" href="/m9/marking.html">M9；Package：SOT23；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology ?AEC-Q101quali

2N7002H-13

N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?MotorControl ?PowerManagementFunctions FeaturesandBenefits ?N-Channel

2N7002H6327XTSA2

OptiMOS??Small-Signal-Transistor

OptiMOSSmall-Signal-Transistor Features ?N-channel ?Enhancementmode ?Logiclevel ?Avalancherated ?fastswitching ?Pb-freelead-plating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21