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2N7002K

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT23；N-Channel Advanced Power MOSFET

Features ?60V/0.2A, RDS(ON)=2500m?(Typ.)@VGS=10V RDS(ON)=2500m?(Typ.)@VGS=5V ?ESDprotectedupto2KV ?LowOn-Resistance ?SuperHighDenseCellDesign ?ReliableandRugged ?LeadFreeandGreenDevicesAvailable(RoHSCompliant) Applications ?PowerManagementinDesktopC

2N7002K_R1_00501

絲?。?a target="_blank" title="Marking" href="/k72/marking.html">K72；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ?RDS(ON),VGS@10V,ID@500mA

2N7002K_V01

N-Channel Enhancement MOSFET

Features LowOn-Resistance:RDS(ON) LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected2KVHBM

2N7002K_V01

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features ?RDS(ON),VGS@10V,ID@500mA

2N7002K2

Advanced trench MOSFETprocess technology

FeaturesandBenefits: ?AdvancedtrenchMOSFETprocesstechnology ?SpecialdesignedforPWM,loadswitchingand generalpurposeapplications ?Ultralowon-resistancewithlowgatecharge ?HighPowerandcurrenthandingcapability ?FullyAvalancheRated ?ESDProtectionHBM≥2KV Descr

2N7002K36

絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-23-6L；Double N-CHANNEL MOSFET in a SOT23-6L Plastic Package.

Features SensitivegatetriggercurrentandLowHoldingcurrent.ESDprotecteddiode. ESDrating:2200VHBM Applications Intendedforuseingeneralpurposeswitchingandphasecontrolapplications.

2N7002K-7

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed

2N7002K-7DITR-ND

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance ?LowInputCapacitance ?FastSwitchingSpeed

2N7002KA

N-channel TrenchMOS FET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelcompatible ■Veryfastswitching ■Subminiaturesurface-mountedpackage ■Gate-sourceElectroStaticDischarge(ESD)protectiondiodes Applicat

恩XP

2N7002KA

N Channel MOSFET

INTERFACEANDSWITCHINGAPPLICATION. FEATURES ?ESDProtected2000V. ?HighdensitycelldesignforlowRDS(ON). ?Voltagecontrolledsmallsignalswitch. ?Ruggedandreliable. ?Highsaturationcurrentcapablity. ?SuffixU:QualifiedtoAEC-Q101. ex)2N7002KA-RTK/HU.