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N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ? Motor Control ? Power Management Functions Features and Benefits ? N-Channel

文件：444.59 Kbytes 頁數(shù)：6 Pages

DIODES

美臺半導體

MOSFET

Features -Power dissipation : 0.35W

文件：122.63 Kbytes 頁數(shù)：4 Pages

COMCHIP

典琦

MOSFET

Features - Drive circuits can be simple. - Low on-resistance. - ESD protected gate up to 2KV HBM. - High-speed switching. - Parallel use is easy.

文件：482.07 Kbytes 頁數(shù)：5 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/c7/marking.html">C7；Package：TSSOP6；60 V, dual N-channel Trench MOSFET

1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technolog

文件：294.8 Kbytes 頁數(shù)：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

絲?。?a target="_blank" title="Marking" href="/2n/marking.html">2N；Package：SC-70；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ?

文件：283.37 Kbytes 頁數(shù)：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

絲?。?a target="_blank" title="Marking" href="/6c/marking.html">6C；Package：SOT-323；We declare that the material of product compliance with RoHS requirements and Halogen Free.

FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● ESD Protected:1000V

文件：1.33572 Mbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子

絲印：7002K；Package：SOT-23；N-Channel Enhancement MOSFET

Features Low On-Resistance:RDS(ON) Low GateThresholdVoltage Low InputCapacitance Fast SwitchingSpeed Low Input/OutputLeakage ESD Protected 2KV HBM

文件：512.299 Kbytes 頁數(shù)：4 Pages

YFWDIODE

佑風微電子

絲印：702K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● HMB ESD protected (2000V) APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.40128 Mbytes 頁數(shù)：5 Pages

CHENDA

辰達半導體

絲印：72K；Package：SOT-23；Plastic-Encapsulate MOSFETS

MOSFET( N-Channel ) Features: 1. RDS(ON) is low; 2. The control trigger is sensitive; 3. With electrostatic protection; Applications: Used for general switching and phase circuits.

文件：307.7 Kbytes 頁數(shù)：1 Pages

SHENZHENSLS

三聯(lián)盛科技股份

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETs

N-channel MOSFET FEATURE ● High density cell design for Low RDS（on） ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.30336 Mbytes 頁數(shù)：5 Pages

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