描述 Description

Qorvo's UF3SC120040B7S is a 1200 V, 35 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

特性 Features

? On-resistance (RDS(on)): 35 mohm (typ)
? Maximum operating temperature: 175 °C
? Excellent reverse recovery: Qrr = 358 nC
? Low body diode VFSD: 1.5 V
? Low gate charge: QG = 43 nC
? Threshold voltage VG(th): 5 V (typ) allowing 0 to 15 V drive

應(yīng)用 Application

? Telecom and Server Power
? Industrial Power Supplies
? Power Factor Correction Modules
? Motor Drives
? Induction Heating