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57002

ConductiveHingedBoxwithFoam

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PD57002

HFto2000MHzClassABCommonSource-PowerSO-10RF

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2to

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PD57002

RFPOWERTRANSISTORSTheLdmoSTPlasticFAMILY

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PD57002-E

RFPOWERtransistor,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs

Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1GHz.Thedeviceisdesignedforhighgainandbroadbandperformanceoperatingincommonsourcemodea

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PD57002-E

RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PD57002S

RFPOWERTRANSISTORSTheLdmoSTPlasticFAMILY

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PD57002S-E

RFPOWERtransistor,LdmoSTplasticfamilyN-channelenhancement-mode,lateralMOSFETs

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PD57002S-E

RFPOWERtransistor,LDMOSTplasticfamilyN-Channelenhancement-modelateralMOSFETs

Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1GHz.Thedeviceisdesignedforhighgainandbroadbandperformanceoperatingincommonsourcemodea

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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