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PD57002

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2

PD57002

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2to

PD57002

RF POWER TRANSISTORS The LdmoST Plastic FAMILY;

PD57002

Package：PowerSO-10 裸露底部焊盤；包裝：帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF 65V 960MHZ PWRSO-10

PD57002-E

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1GHz.Thedeviceisdesignedforhighgainandbroadbandperformanceoperatingincommonsourcemodea

PD57002-E

2W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package; ? Excellent thermal stability\n? Common source configuration? POUT = 2 W with 15dB gain @ 960 MHz / 28 V\n? New RF plastic package;

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.\n \n

PD57002S

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

HFto2000MHzClassABCommonSource-PowerSO-10RF VHF/UHFradioanddigitalcellularBTSapplications HFto2000MHzclassABcommonsource-PowerFLAT VHF/UHFradioapplications HFto2000MHzclassABcommoncource-ceramicpackages UHFTVanddigitalcellularBTSapplications 2

PD57002S-E

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description ThedeviceisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1GHz.Thedeviceisdesignedforhighgainandbroadbandperformanceoperatingincommonsourcemodea

PD57002-E

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PD57002-E_10

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs