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STL38DN6F7AG

Automotive-grade N-channel 60 V, 24 m typ., 10 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 double island package

Features ?AEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Description ThisN-channelPowerMOSFETutilizesSTripFET?F7technologywithan enhancedtrenchgatestructurethat

STL39002Z

IRED in TO-Package

IREDinTO-Package ?InGaAsP/InP-IRED ?Designedforapplicationinfiber-optic ?Datacomsystems ?Transmitterforthe2ndopticalwindow(1300nm) ?Suitableforbitratesupto50Mbit/s ?200Mbit/swithappropriatepulseshapingofthemodulationcurrent ?Highoutputpowerwithdoub

STL3N65M2

N-channel 650 V, 1.6 typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(Coss)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STL40C30H3LL

Marking：40C30H3L；Package：PowerFLAT；N-channel 30 V, 0.019 廓 typ., 10 A, P-channel 30 V, 0.024 廓 typ.,8 A STripFET??VI Power MOSFET in a PowerFLAT 5x6 d. i. package

Description ThisdeviceisacomplementaryN-channelandPchannelPowerMOSFETdevelopedusing STripFET?V(P-channel)andSTripFET?VI DeepGATE?(N-channel)technologies.The resultingdeviceexhibitslowon-stateresistance andanFOMamongthelowestinitsvoltage class. Features ?R

STL40DN3LLH5

Marking：40DN3LLH5；Package：PowerFLAT5x6；Dual N-channel 30 V, 0.016 Ω typ., 11 A STripFET? V Power MOSFET in a PowerFLAT? 5x6 double island

Description ThisdeviceisanN-channelPowerMOSFET developedusingSTMicroelectronics’ STripFET?Vtechnology.Thedevicehasbeen optimizedtoachieveverylowon-stateresistance, contributingtoaFOMthatisamongthebestinits class. Features ■RDS(on)*Qgindustrybenchmark ■

STL42N65M5

N-channel 650 V, 0.070 廓, 34 A MDmesh??V Power MOSFET in PowerFLAT??8x8 HV package

Description ThisdeviceisanN-channelMDmesh?VPower MOSFETbasedonaninnovativeproprietary verticalprocesstechnology,whichiscombined withSTMicroelectronics’well-known PowerMESH?horizontallayoutstructure.The resultingproducthasextremelylowonresistance,whichisunmatche

STL42P4LLF6

Marking：42P4LLF6；Package：PowerFLAT；P-channel 40 V, 0.0155 廓 typ.,42 A, STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET?F6technology, withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness

STL42P6LLF6

Marking：42P6LLF6；Package：PowerFLAT；P-channel -60 V, 23 m廓 typ., -42 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET?F6technology, withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness

STL42P6LLF6

isc P-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent–ID=-42A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) APPLICATIONS ·SynchronousRectificationinSMPS ·Switchingconverters,motordriver,relaydriver·PowerTools ·UPS ·MotorControl

STL42PLLF6

P-channel -60 V, 23 m廓 typ., -42 A STripFET??F6 Power MOSFET in a PowerFLAT??5x6 package

Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET?F6technology, withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness