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STL305N4LF8AG

Automotive N?channel logic level 40 V, 1.0 m? max., 304 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features ?AEC-Q101qualified ?MSL1grade ?175°Cmaximumoperatingjunctiontemperature ?100%avalanchetested ?LowgatechargeQg ?Wettableflankpackage Applications ?Automotivemotorcontrol ?Bodyandconvenience ?Chassisandsafety ?PowertrainforICE Description

STL30NF3LL

N-CHANNEL 30V - 0.008ohm - 30A PowerFLAT??LOW GATE CHARGE STripFET??MOSFET

DESCRIPTION ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“STripFET?”technology.Theresultingtransistorshowsextremelylowon-resistanceandminimalgatecharge.ThenewPowerFLAT?packageallowsasignificantreductioninboardspacewithoutcompromisingperformance

STL31N65M5

Switching applications

Description ThisdeviceisanN-channelMDmesh?VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedam

STL320N4LF8

Marking：320N4LF8；Package：PowerFLAT5x6；N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Features MSL1grade 175°Coperatingtemperature 100avalanchetested Applications Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF8technologyfeaturingan enhancedtrenchgatestructure. ensuresverylowon-stateresistancewhilereducinginternalc

STL325N4LF8AG

Automotive N?channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET in a PowerFLAT 5x6

Features ?AEC-Q101qualified ?MSL1grade ?175°Coperatingtemperature ?100avalanchetested ?Wettableflankpackage Description ThisN-channelPowerMOSFETutilizesSTripFETF8technologyfeaturingan enhancedtrenchgatestructure. Itensuresverylowon-stateresistancewhilere

STL33N60DM6

N-channel 600 V, 125 m typ., 21 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STL33N60M6

N-channel 600 V, 0.115 typ., 21 A MDmeshTM M6 Power MOSFET in a PowerFLATTM 8x8 HV package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STL34NF06

N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT??LOW GATE CHARGE STripFET??I MOSFET

DESCRIPTION ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“STripFET?”technology.Theresultingtransistorshowsextremelylowonresistanceandminimalgatecharge.ThenewPowerFLAT?packageallowasignificantreductioninboardspacewithoutcompramisingperformance.

STL35NF3LL

N-CHANNEL 30V - 0.0055ohm - 35A PowerFLAT??LOW GATE CHARGE STripFET??MOSFET

DESCRIPTION ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“STripFET?”technology.Theresultingtransistorshowsextremelylowon-resistanceandminimalgatecharge.ThenewPowerFLAT?packageallowsasignificantreductioninboardspacewithoutcompromisingperformance

STL36DN6F7

Marking：36DN6F7；Package：PowerFLAT；Dual N-channel 60 V, 23 mΩ typ., 33 A STripFET? F7 Power MOSFET in a PowerFLAT? 5x6 double island package

Features ?AmongthelowestRDS(on)onthemarket ?Excellentfigureofmerit(FoM) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisdualN-channelPowerMOSFETutilizes STripFET?F7technologywithanenhanced