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STL81005X

1550 nm Laser in Coaxial Package with SM-Pigtail, Low Power

1550nmLaserinCoaxialPackagewithSM-Pigtail,LowPower ?Designedforapplicationinfiber-opticnetworks ?LaserdiodewithMulti-QuantumWellstructure ?Suitableforbitratesupto1Gbit/s ?Ternaryphotodiodeatrearmirrorformonitoringandcontrolofradiantpower ?Hermetically

STL81007G

1550 nm Laser in Receptacle Package, Low Power

1550nmLaserinReceptaclePackage,LowPower ?Designedforapplicationsinfiberopticnetworks ?LaserDiodewithMulti-QuantumWellstructure ?Suitableforbitratesupto1Gbit/s ?TernaryPhotodiodeatrearmirrorformonitoringandcontrolofradiantpower ?Hermeticallysealedsubc

STL81007X

1550 nm Laser in Receptacle Package, Low Power

1550nmLaserinReceptaclePackage,LowPower ?Designedforapplicationsinfiberopticnetworks ?LaserDiodewithMulti-QuantumWellstructure ?Suitableforbitratesupto1Gbit/s ?TernaryPhotodiodeatrearmirrorformonitoringandcontrolofradiantpower ?Hermeticallysealedsubc

STL8N65M2

N-channel 650 V, 1 typ., 4 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STL8N6LF3

Marking：8N6LF3；Package：PowerFLAT；Automotive-grade N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET? F3 Power MOSFET in a PowerFLAT? 5x6 package

Features ?AEC-Q101qualified ?LogiclevelVGS(th) ?175°Cmaximumjunctiontemperature ?100avalancherated ?Wettableflankpackage Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingSTripFET?F3technology.Itis designed

STL8P4LLF6

Marking：8P4F6；Package：PowerFLAT；P-channel 40 V, 0.0175 廓 typ.,8 A, STripFET??F6 Power MOSFET in a PowerFLAT??3.3 x 3.3 package

Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET?F6technology, withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages. Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness

STL90N10F7

Marking：90N10F7；Package：PowerFLAT；N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF7technologywithanenhanced trench

STL90N10F7_V01

N-channel 100 V, 7 mΩ typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF7technologywithanenhanced trench

STL90N3LLH6

Marking：90N3LLH6；Package：PowerFLAT；N-channel 30 V, 0.0038 廓 typ., 24 A STripFET??VI DeepGATE?? Power MOSFET in PowerFLAT??5x6 package

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthe6thgenerationofSTripFET?DeepGATE?technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features ?RDS(on)*Qgindustrybenchmark ?Extremelylowon-resistance

STL90N6F7

Marking：90N6F7；Package：PowerFLAT；N-channel 60 V, 4.6 mΩ typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Features ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFETF7technologywithanenhanced trench